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Proceedings Paper

Reflow process stabilization by chemical characteristics and process conditions
Author(s): Myoung-Soo Kim; Jeong-Hyun Park; Hak-Joon Kim; Il-Hyung Kim; Jae-Ha Jeon; Myung-Goon Gil; Bong-Ho Kim
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Paper Abstract

With the shrunken device rule below 130nm, the patterning of smaller contact hole with enough process margin is required for mass production. Therefore, shrinking technology using thermal reflow process has been applied for smaller contact hole formation. In this paper, we have investigated the effects of chemical characteristics such as molecular weight, blocking ratio of resin, cross-linker amount and solvent type with its composition to reflow process of resist and found the optimized chemical composition for reflow process applicable condition. And several process conditions like resist coating thickness and multi-step thermal reflow method have been also evaluated to stabilize the pattern profile and improve CD uniformity after reflow process. From the experiment results, it was confirmed that the effect of crosslinker in resist to reflow properties such as reflow temperature and reflow rate were very critical and it controlled the pattern profile during reflow processing. And also, it showed stable CD uniformity and improved resist properties for top loss, film shrinkage and etch selectivity. The application of lower coating thickness of resist induced symmetric pattern profile even at edge with wider process margin. The introduction of two-step baking method for reflow process showed uniform CD value, also. It is believed that the application of resist containing crosslinker and optimized process conditions for smaller contact hole patterning is necessary for the mass production with a design rule below 130nm.

Paper Details

Date Published: 24 July 2002
PDF: 12 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474277
Show Author Affiliations
Myoung-Soo Kim, Hynix Semiconductor, Inc. (South Korea)
Jeong-Hyun Park, Hynix Semiconductor, Inc. (South Korea)
Hak-Joon Kim, Hynix Semiconductor, Inc. (South Korea)
Il-Hyung Kim, Hynix Semiconductor, Inc. (South Korea)
Jae-Ha Jeon, Hynix Semiconductor, Inc. (South Korea)
Myung-Goon Gil, Hynix Semiconductor, Inc. (South Korea)
Bong-Ho Kim, Hynix Semiconductor, Inc. (South Korea)


Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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