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Proceedings Paper

Methods for comparing contact hole shrinking techniques with 248-nm single layer and bilayer photoresists
Author(s): Karen E. Petrillo; John P. Simons; Ronald DellaGuardia
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Paper Abstract

Several contact hole shrinking techniques have been discussed in the literature recently. Two notable techniques; Resolution Enhancement Lithography Assisted by Chemical Shrink (RELACSTM) and Resist Flow Process (RFP) were investigated in conjunction with several commercially available high activation energy chemically amplified materials and one bilayer material. During the course of this study the unique set of advantages along with the inconveniences associated with each technique were explored. It was not only the lithographic attributes of each technique that were of interest, but also characteristics that would effect manufacturability. To that end, experiments were designed so that standard statistical techniques could be employed at the data analysis stage. The attributes of interest were the amount and control of shrinkage, nested and isolated feature bias, process window comparisons, and line edge roughness. It will be shown how several of theses attributes are directly related to manufacturing issues such as lot-to-lot repeatability and linewidth variations across the wafer.

Paper Details

Date Published: 24 July 2002
PDF: 13 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474275
Show Author Affiliations
Karen E. Petrillo, IBM Thomas J. Watson Research Ctr. (United States)
John P. Simons, IBM Thomas J. Watson Research Ctr. (United States)
Ronald DellaGuardia, IBM Corp. (United States)

Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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