Share Email Print

Proceedings Paper

Effect of delay time on the performance of DUV resist for various pattern size and shape
Author(s): Dong-Seok Kim; Jong O Park; Byung-Ho Nam; Hoon Huh
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Airborne amine control history for DUV lithography dates back to early 1990's. Environmentally stable resist coupled with air filter system was successfully adopted to cope with the issue. Today's trend toward extending KrF lithography lifetime further, however, demands a hard-to-achieve goal in CD control budget. Small CD change which was acceptable several years ago can no longer be tolerated in current critical technology node. We came to know that CD changes in a different manner for delay time depending on the amine concentration, pattern size, shape, and density. At very low amine concentration, delay time dependency is strongly governed by the chemical composition of the resist material. Relaxation of such dependency could be fulfilled by tuning resist bake condition.

Paper Details

Date Published: 24 July 2002
PDF: 8 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474273
Show Author Affiliations
Dong-Seok Kim, Hynix Semiconductor, Inc. (South Korea)
Jong O Park, Hynix Semiconductor, Inc. (South Korea)
Byung-Ho Nam, Hynix Semiconductor, Inc. (South Korea)
Hoon Huh, Hynix Semiconductor, Inc. (South Korea)

Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

© SPIE. Terms of Use
Back to Top