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Proceedings Paper

Evaluation of resist-film property for CD control
Author(s): Hiroshi Shinya; Takahiro Kitano; Hidefumi Matsui; Junichi Kitano
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Paper Abstract

In a photolithography process, it is vital to control Critical Dimension (CD) within wafer. In the current process, although parameters are controlled during post-exposure bake (PEB) and development, only film thickness is checked before exposure for the CD control. However, as the fine patterning by using chemically amplified resist (CAR) has progressed, CD control within wafer has been affected by very small changes of protecting groups; distribution of additives (PAG, quencher etc.) concentrations, and solvent concentrations, thus it has become more important to control film compositions = film properties before exposure. Following by CD variations within wafer caused by air flow in Post applied Bake (PAB) chamber, we examined evaluation methods of KrF resist film properties and made various evaluations of unexposed film after PAB. This paper describes correlation between CD and PAG, quencher, and solvent concentration; consideration of CD variations mechanism based on the correlation data; and problems when shifting to the next generation process.

Paper Details

Date Published: 24 July 2002
PDF: 13 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474269
Show Author Affiliations
Hiroshi Shinya, Tokyo Electron Kyushu Ltd. (Japan)
Takahiro Kitano, Tokyo Electron Kyushu Ltd. (Japan)
Hidefumi Matsui, Tokyo Electron Ltd. (Japan)
Junichi Kitano, Tokyo Electron Ltd. (Japan)


Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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