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Proceedings Paper

Insertion effects of various acid sensitive groups into acetal-type polymer on the profile of 248-nm chemically amplified resist
Author(s): Yoon-Sik Chung; Hyun-Jin Kim; Sook Hee Cho; Dong Hwal Lee; Kwang Hwyi Im; Yun-Gill Yim; Deog-Bae Kim; Jae-Hyun Kim
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Paper Abstract

Various derivatives of modified poly(4-hydoxystyrene-co-4-(1-ethylethoxystyrene))(M-EEPHS) were synthesized by insertion of third monomer unit such as styrene, 4-acetoxystyrene, 4-methoxycarbonyloxystyrene, tertbutoxycarbonyloxystyrene, tert-butyl acrylate, and 4-(1-cyclohexylethoxy)styrene. Their dissolution rate behavior was investigated with different blocking level. From the average dissolution rate of M-EEPHS in a 2.38wt% TMAH solution as a function of the total protection%, hydrophobicity was proven as more influential factor for the dissolution inhibition rather than hydrogen bonding by ester or carbonate functionality in a blocking group. To study structural effect on KRF lithographic performance, resists containing M-EEPHS were formulated and testified. Defects that are found in EEPHS based resist, such as LER (Line Edge Roughness) and top surface erosion at defocus can be solved by incorporation of carbornate, bulky acetal functionality or dissolution inhibition group. When hybrid system, which contained both M-EEPHS and poly[4-hydroxystyrene-co-tert-butyl acrylate-co-4-(3-cyano-1,5-di-tert-butyl carbonyl pentyl styrene)](P(HS-TBA-CBPS)) as an annealing type resin, were compared with the lithographic results of single polymeric system (M-EEPHS only), their performances were directly projected to those of blends of high activation type and low activation type resin.

Paper Details

Date Published: 24 July 2002
PDF: 11 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474266
Show Author Affiliations
Yoon-Sik Chung, DongJin Semichem Co., Ltd. (South Korea)
Hyun-Jin Kim, DongJin Semichem Co., Ltd. (South Korea)
Sook Hee Cho, DongJin Semichem Co., Ltd. (South Korea)
Dong Hwal Lee, DongJin Semichem Co., Ltd. (South Korea)
Kwang Hwyi Im, DongJin Semichem Co., Ltd. (South Korea)
Yun-Gill Yim, DongJin Semichem Co., Ltd. (South Korea)
Deog-Bae Kim, DongJin Semichem Co., Ltd. (South Korea)
Jae-Hyun Kim, DongJin Semichem Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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