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Proceedings Paper

Application of diluted developer solution (DDS) process to 193-nm photolithography process
Author(s): Keiichi Tanaka; Hiroyuki Iwaki; Yoshiaki Yamada; Yukio Kiba; Shigenori Kamei; Kazuyuki Goto
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Paper Abstract

Along with the trend of reducing the critical dimension in photolithography, exposure wavelength has been shortened from 248nm to 193nm. Resin structures of resist including their chemical characteristics have been altered from PHS to acrylate polymer. On the other hand, 2.38wt% TMAH developer solution is widely used, which was optimized at the time of 436nm resist process. However, since the resist backbone and chemical characteristics of 193nm resist are different from that of 436nm resist. So, TMAH concentration of 2.38wt% is not necessarily the best value for 193nm process and may even worsen the process latitude. Therefore, we have studied improvement of the process latitude such as CD uniformity, pattern defect, and dissolution mechanism of 193nm resist in developer solution, by applying Diluted Developer Solution (DDS) on 193nm resist process.

Paper Details

Date Published: 24 July 2002
PDF: 14 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474256
Show Author Affiliations
Keiichi Tanaka, Tokyo Electron Kyushu Ltd. (Japan)
Hiroyuki Iwaki, Tokyo Electron Ltd. (Japan)
Yoshiaki Yamada, Tokyo Electron Ltd. (Japan)
Yukio Kiba, Tokyo Electron Kyushu Ltd. (Japan)
Shigenori Kamei, Tokyo Electron Kyushu Ltd. (Japan)
Kazuyuki Goto, Tokyo Electron Kyushu Ltd. (Japan)

Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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