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Proceedings Paper

Molecular resists with t-butyl cholate as a dendrimer core
Author(s): Jin-Baek Kim; Tae Hwan Oh; Young-Gil Kwon
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Paper Abstract

Several molecular resist materials were synthesized for 193 nm photoresists. They include cholate derivatives as dendrimer cores and ester groups as peripheral parts. Cholate derivatives provide etch resistance and peripheral parts give coatability and acid-labile polarity change. They were synthesized using an acetal-protected anhydride derivative of 2,2-bis(hydroxymethyl)proponic acid as an acylating reagent. These dendrimer materials were grown to the 1st generation. t-Butoxy esters are attached to the end of peripheral parts for positive-tone resists. These molecular resist materials were coated well to the silicon wafer and show good sensitivity and etch resistance.

Paper Details

Date Published: 24 July 2002
PDF: 8 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474255
Show Author Affiliations
Jin-Baek Kim, Korea Advanced Institute of Science and Technology (South Korea)
Tae Hwan Oh, Korea Advanced Institute of Science and Technology (South Korea)
Young-Gil Kwon, Korea Advanced Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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