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Proceedings Paper

Performance of vinyl ether cross-linkers on resist for 193-nm lithography
Author(s): JongSoo Lee; Hideo Suzuki; Keisuke Odoi; Nobukazu Miyagawa; Shigeru Takahara; Tsuguo Yamaoka
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Paper Abstract

A three-component positive working resist composed of an acrylate polymer, vinyl ether cross-linker, and photoacid generator was evaluated for vacuum UV lithography. The vinyl ether cross-linker using tricyclodecyl group of alicyclic compound has a high transparency. This resist system shows a relatively high sensitivity and has a good profiling by irradiation using 193 nm light from an ArF excimer laser. Moreover, we found that these cross-linking type resists have advantages with respect to its resist properties such as the acid diffusion and the dry etching resistance.

Paper Details

Date Published: 24 July 2002
PDF: 8 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474254
Show Author Affiliations
JongSoo Lee, Chiba Univ. (Japan)
Hideo Suzuki, Nissan Chemical Industries, Ltd. (Japan)
Keisuke Odoi, Nissan Chemical Industries, Ltd. (Japan)
Nobukazu Miyagawa, Chiba Univ. (Japan)
Shigeru Takahara, Chiba Univ. (Japan)
Tsuguo Yamaoka, Chiba Univ. (Japan)


Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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