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Proceedings Paper

Implementation of the ArF resists based on VEMA for sub-100-nm device
Author(s): Hyun-Woo Kim; Sook Lee; Sang-Jun Choi; Sung-Ho Lee; Yool Kang; Sang-Gyun Woo; Dongseok Nam; Yun-Sook Chae; Jisoo Kim; Joo-Tae Moon; Robert J. Kavanagh; George G. Barclay
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Paper Abstract

It is expected that ArF lithography will be introduced for device manufacturing for sub-100 nm nodes, as high NA ArF step and scan systems (NA=0.75) become available. We previously reported on a platform, based on a vinyl ether- maleic anhydride (VEMA) alternating polymer system. This platform demonstrated both good resolution and high dry etch resistance in comparison to other platforms based on acrylate and cyclic-olefin-maleic anhydride (COMA) polymer systems. The VEMA platform has been continuously improved to meet the increasing requirements, such as resolution, depth of focus (DOF) iso-dense bias, and post-etch roughness for real device manufacturing. This VEMA system is being implemented for sub-100 nm device with high NA (NA=0.75) ArF exposure systems. In this paper, recent experimental results are reviewed.

Paper Details

Date Published: 24 July 2002
PDF: 8 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474253
Show Author Affiliations
Hyun-Woo Kim, Samsung Electronics Co., Ltd. (South Korea)
Sook Lee, Samsung Electronics Co., Ltd. (South Korea)
Sang-Jun Choi, Samsung Electronics Co., Ltd. (South Korea)
Sung-Ho Lee, Samsung Electronics Co., Ltd. (South Korea)
Yool Kang, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Dongseok Nam, Samsung Electronics Co., Ltd. (South Korea)
Yun-Sook Chae, Samsung Electronics Co., Ltd. (South Korea)
Jisoo Kim, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)
Robert J. Kavanagh, Shipley Co. Inc. (United States)
George G. Barclay, Shipley Co. Inc. (United States)


Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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