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Proceedings Paper

Investigation of a fluorinated ESCAP-based resist for 157-nm lithography
Author(s): Sungseo Cho; Axel Klauck-Jacobs; Shintaro Yamada; Cheng-Bai Xu; JoAnne Leonard; Anthony Zampini
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Paper Abstract

A survey of fluorine-containing aromatic polymers, with and without base soluble functionality, was conducted to determine their potential utility in 157 nm lithography. The focus was toward the design and evaluation of fluorine- containing polymers that closely paralleled the ESCAP matrix resins now successfully used in 248 nm photoresists. New 4- hydroxytetrafluorostyrene (HTFS) based homo-, co- and ter- polymers were prepared and evaluated for their potential utility at 157 nm resists. Significant advances were made toward reducing absorbance with fluorine substitution and monomer variation. The polymers form good films, have acceptable thermal stability and show good dry etch resistance with promising potential in thin film resist applications. The synthesis and pertinent characteristics of the new polymer systems as well as preliminary oxide etch results on representative polymers are discussed.

Paper Details

Date Published: 24 July 2002
PDF: 11 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474251
Show Author Affiliations
Sungseo Cho, Air Products and Chemicals (United States)
Axel Klauck-Jacobs, Air Products and Chemicals (United States)
Shintaro Yamada, Shipley Co. Inc. (United States)
Cheng-Bai Xu, Shipley Co. Inc. (United States)
JoAnne Leonard, Shipley Co. Inc. (United States)
Anthony Zampini, Shipley Co. Inc. (United States)

Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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