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Proceedings Paper

157-nm single-layer resists based on advanced fluorinated polymers
Author(s): Naomi Shida; Hiroyuki Watanabe; Tamio Yamazaki; Seiichi Ishikawa; Minoru Toriumi; Toshiro Itani
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Paper Abstract

Various polymer structures for 157-nm lithography have been vigorously developed for post 193-nm lithography. Polymers with a fluorinated main chain can improve high transparency at the 157-nm wavelength; conversely, norbornene copolymers with fluoride pendant groups do not achieve so high transparency at the 157-nm wavelength. We have developed a novel 157-nm chemically amplified resist. It is composed of a fluorinated monocyclic main-chain polymer, which shows high transparency and can be used for single layer resists. This new resist is referred to as a Small Absorbance Fluorine contAining ResIst (SAFARI). The SAFARI resist exhibited high-resolution patterns of 65-nm line and space patterns using a 0.85 NA microstepper, good sensitivity of 4 mJ/cm2, and high transparency when applied to 250-nm film thickness.

Paper Details

Date Published: 24 July 2002
PDF: 7 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474247
Show Author Affiliations
Naomi Shida, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroyuki Watanabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tamio Yamazaki, Semiconductor Leading Edge Technologies, Inc. (Japan)
Seiichi Ishikawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Minoru Toriumi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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