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Proceedings Paper

Mesoscale simulation of positive tone chemically amplified photoresists
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Paper Abstract

A mesoscale computer simulation for positive tone chemically amplified resists is reported. The simulation is based upon detailed models of resist function, and the required simulation inputs are fundamental quantities that can be measured independently of lithographic performance. These input parameters include resist formulation variables such as polymer molecular weight, photoacid generator loading, and activation energy of the deprotection reaction, as well as processing variables such as temperature and duration of bake steps and developer concentration. The simulation can model all major resist processing steps: spincoat and post apply bake, exposure, post exposure bake, dissolution, and drying. The general approach involves representing the photoresist film on a three dimensional lattice. Some lattice sites represent acid or solvent molecules and other lattice sites are strung together to form polymer chains. Each lattice cell is considered individually during the simulation, and each behaves in a manner consistent with its chemical identity. The mesoscale nature of the model allows investigation of stochastic effects that lead to line edge roughness, such as shot noise during exposure and the finite size of resist molecules. The model is based upon extensive experimental studies, and has now yielded results that are qualitatively correct for all major lithographic processing steps.

Paper Details

Date Published: 24 July 2002
PDF: 10 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474237
Show Author Affiliations
Gerard M. Schmid, Univ. of Texas/Austin (United States)
Sean D. Burns, Univ. of Texas/Austin (United States)
Michael D. Stewart, Univ. of Texas/Austin (United States)
C. Grant Willson, Univ. of Texas/Austin (United States)


Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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