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Proceedings Paper

Surface properties and topography of 193-nm resist after exposure and development
Author(s): Odo Wunnicke; Anja Hennig; Karina Grundke; Manfred Stamm; Guenther Czech
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Paper Abstract

Surface properties of photo resist lines are of particular interest in future semiconductor applications. Current hot topics as pattern collapse (PC) and line edge roughness (LER) are closely related to surface properties of the resist. The surface origin on PC and LER based on the interaction of the rinse liquid with the resist and the interaction between the resist surface and the developer, respectively. In this paper we present a characterization of a reference surface prepared by an open frame exposure. Utilizing scanning force microscopy (SFM) the surface topography is analyzed. From the SFM images vertical structures (root mean square roughness) as well as lateral structures (most prominent in-plane lengths) are extracted. Advancing and receding contact angles were measured to characterize changes in hydrophilic/hydrophobic surface properties of the photo resist after development. With increasing thickness loss of the initial film the surface roughness and the most prominent in-plane length scales increase while the contact angle decreases. An analogy of the prepared surfaces with phase separated structures is presented.

Paper Details

Date Published: 24 July 2002
PDF: 10 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474231
Show Author Affiliations
Odo Wunnicke, Infineon Technologies AG (Germany)
Anja Hennig, Infineon Technologies AG and Institut fuer Polymerforschung (Germany)
Karina Grundke, Institute for Polymer Research Dresden (Germany)
Manfred Stamm, Institute for Polymer Research Dresden (Germany)
Guenther Czech, Infineon Technologies AG (Germany)


Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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