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Proceedings Paper

Fluoropolymer resists for 157-nm lithography
Author(s): Minoru Toriumi; Naomi Shida; Hiroyuki Watanabe; Tamio Yamazaki; Seiichi Ishikawa; Toshiro Itani
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Paper Abstract

Fluoropolymers are key materials for single-layer resists in 157-nm lithography. We investigated main-chain fluorinated polymers and found that the incorporation of fluorine atoms into polymer backbones such as that in tetrafluoroethylene and monocyclic monomers reduced their absorption coefficients to less than 1 micrometers -1 at 157 nm, while side-chain fluorinated polymers had absorption coefficients of 2 to 3 micrometers -1. The main-chain fluorinated polymers also showed good solubility in a standard alkaline developer and their dry-etching resistance was comparable to that of a ArF resist. Prototype positive-tone resists had good sensitivities of less than 10 mJ/cm2, and they exhibited fine imaging resolution with 80-nm dense patterns. The resists can be used to obtain 300-nm-thick films.

Paper Details

Date Published: 24 July 2002
PDF: 9 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474218
Show Author Affiliations
Minoru Toriumi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Naomi Shida, Semiconductor Leading Edge Technologies, Inc. (Japan)
Hiroyuki Watanabe, Semiconductor Leading Edge Technologies, Inc. (Japan)
Tamio Yamazaki, Semiconductor Leading Edge Technologies, Inc. (Japan)
Seiichi Ishikawa, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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