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Proceedings Paper

100-nm generation contact patterning by low temperature 193-nm resist reflow process
Author(s): Veerle Van Driessche; Kevin Lucas; Frieda Van Roey; Grozdan Grozev; Plamen Tzviatkov
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Paper Abstract

Contact lithography for the 100nm generation is a difficult challenge with current layer 193nm resist processes. The SIA roadmap lists the contact hole size for 100 nm lithography as 115 nm. Even with next generation very high NA (>0.7) 193nm exposure tools, early results indicate that these contact hole sizes can not be obtained with standard processing techniques. Therefore, we have investigated the feasibility of using resist reflow to obtain small contact hole sizes.

Paper Details

Date Published: 24 July 2002
PDF: 12 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474204
Show Author Affiliations
Veerle Van Driessche, Arch Chemicals N.V. (Belgium)
Kevin Lucas, Motorola (United States)
Frieda Van Roey, IMEC (Belgium)
Grozdan Grozev, Arch Chemicals N.V. (Belgium)
Plamen Tzviatkov, Arch Chemicals N.V. (United States)

Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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