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Proceedings Paper

Fullerene incorporation in DNQ Novolak photoresist for increasing plasma etch resistance
Author(s): J. David Benson; Andrew J. Stoltz; Andrew W. Kaleczy; John H. Dinan
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Paper Abstract

Incorporating fullerene into DNQ novolak resist provides a 60 percent reduction in the ECR plasma etch rate in a hydrogen/argon plasma. The reduction in plasma etch rate was also accompanied by a 5 degree(s)C increase in the pattern flow temperature. Plasma etch resistance was added to the photoresist after pattern exposure. Fullerene incorporation was accomplished by pattern development in a C60 /tetra-methyl ammonium hydroxide (TMAH) solution.

Paper Details

Date Published: 24 July 2002
PDF: 4 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474200
Show Author Affiliations
J. David Benson, U.S. Army Night Vision & Electronic Sensors Directorate (United States)
Andrew J. Stoltz, U.S. Army Night Vision & Electronic Sensors Directorate (United States)
Andrew W. Kaleczy, U.S. Army Night Vision & Electronic Sensors Directorate (United States)
John H. Dinan, U.S. Army Night Vision & Electronic Sensors Directorate (United States)


Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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