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Proceedings Paper

Organoelement resists for EUV lithography
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Paper Abstract

EUV lithography is perhaps the most promising of the NGL technologies for sub-100nm resolution. To address needs in this area, we have designed and synthesized several types of organoelement resists using only low absorbing elements, including H, C, Si and B. One category is based on silicon-containing block and random polymers. They show high transparency according to theoretical simulations and have high oxygen reactive ion etch resistances compared to Novolac resins. In a preliminary study, we were able to image these polymers to 180 nm line/space patterns using EUV exposure. A second type of EUV transparent resist platform involves boron-containing polymers. Carborane carboxylic acid was attached to a copolymer backbone to introduce boron atoms with controlled attachment level. It was found that incorporation of a small amount of B provides remarkably high oxygen etch resistance.

Paper Details

Date Published: 24 July 2002
PDF: 10 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474197
Show Author Affiliations
Junyan Dai, Cornell Univ. (United States)
Christopher Kemper Ober, Cornell Univ. (United States)
Lin Wang, Univ. of Wisconsin/Madison (United States)
Franco Cerrina, Univ. of Wisconsin/Madison (United States)
Paul F. Nealey, Univ. of Wisconsin/Madison (United States)

Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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