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Proceedings Paper

Negative-tone CAR resists for e-beam lithography: modification of chemical composition for R&D application (high resolution) or production application (high sensitivity)
Author(s): Murielle Charpin; Laurent Pain; Serge V. Tedesco; C. Gourgon; A. Andrei; Daniel Henry; Yves LaPlanche; Ryotaro Hanawa; Tadashi Kusumoto; Masumi Suetsugu; H. Yokoyama
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Paper Abstract

In this study, it is investigated how chemical modifications of a given resist platform can induce improvements in e-beam lithographic performances. Molecular weight (Mw) as well as photo-acid generator (PAG) modifications will act as fine tuners for Sumitomo NEB-33 negative resist to match specific applications: preparation of advanced CMOS R&D architecture (highly resolving resists needed) and fast patterning for production environment (highly sensitive resists needed).

Paper Details

Date Published: 24 July 2002
PDF: 14 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474193
Show Author Affiliations
Murielle Charpin, CEA-LETI (France)
Laurent Pain, CEA-LETI (France)
Serge V. Tedesco, CEA-LETI (France)
C. Gourgon, CNRS (France)
A. Andrei, STMicroelectronics (France)
Daniel Henry, STMicroelectronics (France)
Yves LaPlanche, STMicroelectronics (France)
Ryotaro Hanawa, Sumitomo Chemical Co., Ltd. (Japan)
Tadashi Kusumoto, Sumitomo Chemical Co., Ltd. (Japan)
Masumi Suetsugu, Sumitomo Chemical Co., Ltd. (Japan)
H. Yokoyama, Sumitomo Chemical Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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