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Proceedings Paper

Sub-100 nm T-gates utilizing a single E-beam lithography exposure process
Author(s): Eric S. Ainley; Scott Ageno; Kevin J. Nordquist; Douglas J. Resnick
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Paper Abstract

Sub 100 nm T-gate structures have been produced using a tri- level resist stack modified from previously published results utilizing ZEP7000A, PMGI and ZEP520A positive e-beam resists. The new resist stack replaces the top resist with the more sensitive ZEP7000A from Zeon Chemical. The does sensitivity of the ZEP1000A is an order of magnitude higher than the ZEP520A. This difference provides the flexibility to create T-gate structures with larger top cross-sectional dimensions, which increase the transconductance. The technique can also be used to create other novel structures such as gamma-gates and small air bridges, by varying the dose on the different parts of a feature design to achieve the desired three-dimensional resist structure.

Paper Details

Date Published: 24 July 2002
PDF: 14 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474192
Show Author Affiliations
Eric S. Ainley, Motorola (United States)
Scott Ageno, Motorola (United States)
Kevin J. Nordquist, Motorola (United States)
Douglas J. Resnick, Motorola (United States)


Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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