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Proceedings Paper

Optimization of organic bottom antireflective coatings' compatibility with ArF resists
Author(s): Zhong Xiang; Jianhui Shan; Eleazar Gonzalez; Hengpeng Wu; Shuji Ding; Mark Neisser; Bang-Chein Ho; Harrison Chen
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Paper Abstract

To have excellent compatibility with ArF resists is the goal in development of bottom antireflective coatings (B.A.R.C.) for 193nm lithographic application. We need to be able to adjust chemical compatibility and optical properties of ArF B.A.R.C. to accommodate various film stacks. We need to deliver ArF B.A.R.C. materials with excellent coating uniformity, long shelf life and ultra-low defect level. In the meantime, we also need to improve etch rate of the ArF B.A.R.C.s for shorter etch time. In this paper, we will focus on our recent efforts to optimize the organic ArF B.A.R.C.s' compatibility with ArF resists in the areas mentioned above.

Paper Details

Date Published: 24 July 2002
PDF: 10 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474186
Show Author Affiliations
Zhong Xiang, Clariant Corp. (United States)
Jianhui Shan, Clariant Corp. (United States)
Eleazar Gonzalez, Clariant Corp. (United States)
Hengpeng Wu, Clariant Corp. (United States)
Shuji Ding, Clariant Corp. (United States)
Mark Neisser, Clariant Corp. (United States)
Bang-Chein Ho, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Harrison Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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