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Proceedings Paper

Verification of a high-resolution PEB parameter extraction methodology based on double exposure technique
Author(s): Lei Yuan; Andrew R. Neureuther
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Paper Abstract

A sequential double exposure technique for characterizing resist materials suggested by the authors is demonstrated experimentally at 248nm lithography. This technique is verified to improve two-dimension pattern and line end shortening. A new PEB parameter extraction method based on the double exposed technique is applied to UV210 and APEX-E and the first round results have been obtained. With the help of the new methodology, Fickean and non-Fickean diffusions are evaluated.

Paper Details

Date Published: 24 July 2002
PDF: 10 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474173
Show Author Affiliations
Lei Yuan, Univ. of California/Berkeley (United States)
Andrew R. Neureuther, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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