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Proceedings Paper

Behavior and control of resist dissolution in the development process
Author(s): Yoshifumi Takai; James Mulhall; Kosuke Yoshihara; Hideharu Kyoda; Hirofumi Takeguchi
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Paper Abstract

As the emphasis on critical dimension (CD) control in sub-micron lithography becomes more important, the mechanism of the development process and the different contributing factors will need to be further explored by equipment manufacturers. It was observed that the use of reticles with smaller exposed area ratio (EAR) have different affects on CD uniformity. To gain better control of CDs, we examined several of the contributing factors in the development process. Some significant factors are the affects of EAR and the affects of the rapid concentration changes of tetrametylammonium hydroxide (TMAH) surrounding the resist patterns that appears to slow the reaction rates of the developer. Using several chemically amplified resists (positive) and reticles with varying EAR, we determined that there are two phases (First Term & Second Term) of the development process. Within each term, there are significantly important processes taking place in and around the resist patterns. In the First Term, the importance is on proper amount of equally distributed developer on the wafer surrounding the resist patterns. In the Second Term, there is a rapid change to CD's meaning a greater possibility of control. Once determining the two terms of the development process, different concentrations of TMAH were experimented with to examine the mechanism of the resist dissolution movement. After observing the movement on the surface of the wafer, we believe that the resist dissolution moves within the puddle of the developer impeding the reaction rate for proper CD formation. By controlling the impeding affects of the dissolved resist in the Second Term, we believe that CD uniformity can be greatly improved.

Paper Details

Date Published: 24 July 2002
PDF: 7 pages
Proc. SPIE 4690, Advances in Resist Technology and Processing XIX, (24 July 2002); doi: 10.1117/12.474166
Show Author Affiliations
Yoshifumi Takai, Tokyo Electron Texas, Inc. (United States)
James Mulhall, Tokyo Electron Texas, Inc. (United States)
Kosuke Yoshihara, Tokyo Electron Kyushu Ltd. (Japan)
Hideharu Kyoda, Tokyo Electron Kyushu Ltd. (Japan)
Hirofumi Takeguchi, Tokyo Electron Kyushu Ltd. (Japan)

Published in SPIE Proceedings Vol. 4690:
Advances in Resist Technology and Processing XIX
Theodore H. Fedynyshyn, Editor(s)

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