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Proceedings Paper

AC measurement for characterizing the trap processes in poly-silicon TFTs
Author(s): Feng Yan; Piero Migliorato; Tatsuya Shimoda
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Paper Abstract

We report a new method for characterizing trap generation-recombination processes in Polysilicon TFTs. A small AC voltage was superimposed on a DC gate voltage and the ac current was measured at the source. A theoretical model has been developed, whereby n-channel TFTs have been analysed. A resonant peak in the imaginary part of the ac current and a corresponding step in the real part were found at the frequency of 147Hz. Our data indicate that the ac response is dominated by a single trap level. By combining the ac current measurement with low frequency capacitance measurement, we have determined the trap energy, capture cross section, trap density to be respectively 0.35eV above midgap, 3.1x10-21cm2, 5.7x1015 cm-3.

Paper Details

Date Published: 16 May 2003
PDF: 5 pages
Proc. SPIE 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas, (16 May 2003); doi: 10.1117/12.473884
Show Author Affiliations
Feng Yan, Cambridge Univ. (United Kingdom)
Piero Migliorato, Cambridge Univ. (United Kingdom)
Tatsuya Shimoda, Seiko Epson Corp. (Japan)


Published in SPIE Proceedings Vol. 5004:
Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas
Apostolos T. Voutsas, Editor(s)

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