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Proceedings Paper

High-sensitivity and high-dry-etching durability positive-type electron-beam resist
Author(s): Akira Tamura; Masaji Yonezawa; Mitsuyoshi Sato; Yoshiaki Fujimoto
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Paper Abstract

As feature sizes of semiconductors grow smaller, a resist having dry etching durability and high sensitivity is required for electron beam lithography. However, the positive type electron beam resist having both high sensitivity and high dry etching durability, which suits for practical use, has not been developed yet. In order to solve this problem, a homologous series of poly(alkyl 2-cyanoacrylate) has been investigated. As a result, the new positive type electron beam resist having high sensitivity, high dry etching durability, and high thermal resistance has been developed. This new type of resist consists of poly(cyclohexyl 2- cyanoacrylate), and these features of this resist are due to the cyano and the cyclohexyl groups. The dry etching durability of this resist is 2.19 times as high as that of poly(mthyl methacrylate) (PMMA). The sensitivity is 1.7 (mu) C/cm2 at accelerating voltage of 20 kV, which is about the same as that of poly(butene-1-sulfone) (PBS). Moreover, poly(cyclohexyl 2-cyanoacrylate) has the glass transition of 152 degree(s)C, and then it is thermally stable. Using this resist in photomask fabrication by dry etching, the chrome linewidth uniformity of 0.034 micrometers 3 (sigma) can be obtained.

Paper Details

Date Published: 1 August 1991
PDF: 11 pages
Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); doi: 10.1117/12.47364
Show Author Affiliations
Akira Tamura, Toppan Printing Co., Ltd. (Japan)
Masaji Yonezawa, Toppan Printing Co., Ltd. (Japan)
Mitsuyoshi Sato, Toagosei Chemical Industry Co., Ltd. (Japan)
Yoshiaki Fujimoto, Toagosei Chemical Industry Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 1465:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing
Martin C. Peckerar, Editor(s)

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