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Proceedings Paper

Advanced lithographic methods for contact patterning on severe topography
Author(s): Ronfu Chu; James S. Greeneich; Barton A. Katz; Hwang-Kuen Lin; Dong-Tsair Huang
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Paper Abstract

High packing density integrated circuits such as 4 MB DRAM require many interconnect layers. The resulting topography can be very challenging at each layer, particularly for patterning contacts. This paper provides practical techniques for imaging submicron contact holes on topographical substrates. Patterning is done using a 0.48 NA i-line stepper, and methods for achieving 0.5 micrometers contact holes and other features on topographical substrates are described. Results for process latitudes, depth of focus, and feature size dependencies are reported.

Paper Details

Date Published: 1 August 1991
PDF: 6 pages
Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); doi: 10.1117/12.47362
Show Author Affiliations
Ronfu Chu, ASM Lithography, Inc. (United States)
James S. Greeneich, ASM Lithography, Inc. (United States)
Barton A. Katz, ASM Lithography, Inc. (United States)
Hwang-Kuen Lin, Industrial Technology Research Institute (Taiwan)
Dong-Tsair Huang, Industrial Technology Research Institute (Taiwan)

Published in SPIE Proceedings Vol. 1465:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing
Martin C. Peckerar, Editor(s)

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