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Proceedings Paper

Modeling of illumination effects on resist profiles in x-ray lithography
Author(s): Heinrich K. Oertel; M. Weiss; Hans L. Huber; Yuli Vladimirsky; Juan R. Maldonado
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Paper Abstract

Image intensity profiles and resist profile calculations using the XMAS simulation program are presented for storage ring x-ray lithography proximity printing under several illumination conditions. The calculations indicate the existence of a wide process window for the simultaneous replication of several kinds of subquarter-micron features.

Paper Details

Date Published: 1 August 1991
PDF: 10 pages
Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); doi: 10.1117/12.47361
Show Author Affiliations
Heinrich K. Oertel, Fraunhofer-Institut fuer Mikrostrukturtechnik-IMT (Germany)
M. Weiss, Fraunhofer-Institut fuer Mikrostrukturtechnik-IMT (Germany)
Hans L. Huber, Fraunhofer-Institut fuer Mikrostrukturtechnik-IMT (Germany)
Yuli Vladimirsky, IBM Corp. (United States)
Juan R. Maldonado, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 1465:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing
Martin C. Peckerar, Editor(s)

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