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Proceedings Paper

Chemically amplified resists for x-ray and e-beam lithography
Author(s): Amanda K. Berry; Karen A. Graziano; Stephen D. Thompson; James Welch Taylor; Doowon Suh; Dean Plumb
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Paper Abstract

The development of both negative and positive resists with high sensitivity and high resolution capability is critical to the production of devices using x-ray exposure technology. This paper describes a class of aqueous developable acid hardened negative and positive resists which produce crosslinked images under x-ray exposure and subsequent processing steps. The resists are chemically amplified for high sensitivity. Linewidths down to 0.1 micron have been printed with a negative resist using e-beam exposure, and 0.4 micron mask-limited featurers have been printed with an x-ray dose of > 60 mJ/cm2. The feasibility of a high resolution positive acid hardened resist has been demonstrated and remains to be optimized.

Paper Details

Date Published: 1 August 1991
PDF: 11 pages
Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); doi: 10.1117/12.47358
Show Author Affiliations
Amanda K. Berry, Rohm and Haas Co. (United States)
Karen A. Graziano, Rohm and Haas Co. (United States)
Stephen D. Thompson, Rohm and Haas Co. (United States)
James Welch Taylor, Univ. of Wisconsin/Madison (United States)
Doowon Suh, Univ. of Wisconsin/Madison (United States)
Dean Plumb, Univ. of Wisconsin/Madison (United States)


Published in SPIE Proceedings Vol. 1465:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing
Martin C. Peckerar, Editor(s)

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