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Proceedings Paper

Mushroom-shaped gates defined by e-beam lithography down to 80-nm gate lengths and fabrication of pseudomorphic HEMTs with a dry-etched gate recess
Author(s): Axel Huelsmann; G. Kaufel; Brian Raynor; Klaus Koehler; T. Schweizer; Juergen Braunstein; Michael Schlechtweg; Paul J. Tasker; Theo F. Jakobus
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Paper Abstract

Sub-0.1 micrometers mushroom-shaped gates (T-gates) have been realized with a three-layer resist technique using e-beam exposure. The exposure was carried out on a Philips EPBG-3 system operating at 50 kV. The resist system and writing strategy were investigated. Test exposures on SiN-capped GaAs wafers with ohmic contacts having the same topography as active devices were carried out. Using this T-gate lithography, pseudomorphic AlGaAs/InGaAs/GaAs HEMTs were fabricated. These devices have transit frequencies of 120 GHz.

Paper Details

Date Published: 1 August 1991
PDF: 8 pages
Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); doi: 10.1117/12.47357
Show Author Affiliations
Axel Huelsmann, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
G. Kaufel, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Brian Raynor, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Klaus Koehler, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
T. Schweizer, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Juergen Braunstein, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Michael Schlechtweg, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Paul J. Tasker, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Theo F. Jakobus, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)


Published in SPIE Proceedings Vol. 1465:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing
Martin C. Peckerar, Editor(s)

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