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Proceedings Paper

Application of an electron-beam scattering parameter extraction method for proximity correction in direct-write electron-beam lithography
Author(s): Rudolf M. Weiss; Robert M. Sills
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Paper Abstract

Proximity correction schemes as used in electron beam lithography require the determination of electron scattering within the exposed resist and underlying substrate material. Scattering of an electron beam in a solid can be described by a double Gaussian function with coefficients (alpha) (forward scattering), (beta) (backward scattering), and (eta) E (ratio of energy deposition due to backscattering and forward scattering). These three coefficients are also referred to as 'proximity parameters.' This paper discussed proximity parameters mainly as a function of resist thickness. New experimental results are reported.

Paper Details

Date Published: 1 August 1991
PDF: 9 pages
Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); doi: 10.1117/12.47356
Show Author Affiliations
Rudolf M. Weiss, Etec Systems, Inc. (United States)
Robert M. Sills, Etec Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 1465:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing
Martin C. Peckerar, Editor(s)

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