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Proceedings Paper

Multiple scattered electron-beam effect in electron-beam lithography
Author(s): Norio Saitou; Teruo Iwasaki; Fumio Murai
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Paper Abstract

The multiple electron beam scattering effect is studied experimentally in an electron optical column. This effect causes a serious problem on the critical dimension of LSI pattern when the whole area of a wafer is exposed to an electron beam. This paper discusses the quantitative analysis and a method of reducing this effect.

Paper Details

Date Published: 1 August 1991
PDF: 7 pages
Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); doi: 10.1117/12.47355
Show Author Affiliations
Norio Saitou, Hitachi, Ltd. (Japan)
Teruo Iwasaki, Hitachi, Ltd. (Japan)
Fumio Murai, Hitachi, Ltd. (Japan)


Published in SPIE Proceedings Vol. 1465:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing
Martin C. Peckerar, Editor(s)

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