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Proceedings Paper

Three-dimensional aspects of the shrinking phenomenon of ArF resist
Author(s): Ido Laufer; Giora E. Eytan; Ophir Dror
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Paper Abstract

Previous studies of the interaction of electron beams with different types of ArF resists have shown the undesired phenomenon of the resist shrinkage. The lateral component of this shrinkage has been detected and quantified easily by SEM CD measurements. However, the vertical extent of this phenomenon has to date remained unknown. In this work we present measurements of the changes in height and sidewall angles of an ArF line by using a new e-beam tilting ability of the Vera SEM 3D. The 3D measurement results show that the height of the line shrinks in similar proportions to the top and bottom CDs, with a difference in the magnitude. Due to higher penetration depth of the e-beam on the top of the line than on the sidewall, the vertical shrinkage reaches steady state more rapidly than the lateral shrinkage. We also found a slight reduction in sidewall angle, which is less than one degree even under high e-beam exposure.

Paper Details

Date Published: 16 July 2002
PDF: 5 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473531
Show Author Affiliations
Ido Laufer, Applied Materials (Israel)
Giora E. Eytan, Applied Materials (Israel)
Ophir Dror, Applied Materials (Israel)

Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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