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Proceedings Paper

Die-scale wafer flatness: 3D imaging across 20 mm with nanometer-scale resolution
Author(s): Kirk Miller; David H. Fong; Dean J. Dawson; Bradley Todd
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Paper Abstract

We present 3-dimensional atomic force profiler (AFP) measurements on die-scale flatness after copper and STI CMP. True metrology is achieved for patterned wafers. Wafers are vacuum-mounted on a flat chuck, as they would be in a stepper, so wafer warpage and strain-related non-planarity are not present. The results of this new technique are compared against current measurement techniques. For logic, memory and System-on-a-chip, we discuss the implications of wafer planarity going into subsequent photolithography steps.

Paper Details

Date Published: 16 July 2002
PDF: 5 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473527
Show Author Affiliations
Kirk Miller, Veeco Metrology Group (United States)
David H. Fong, Veeco Metrology Group (United States)
Dean J. Dawson, Veeco Metrology Group (United States)
Bradley Todd, Veeco Metrology Group (United States)


Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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