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Proceedings Paper

CD-SEM calibration with TEM to reduce CD measurement error
Author(s): Chang-Young Jeong; Joohyoung Lee; Ki-Yeop Park; Won Gyu Lee; Dai-Hoon Lee
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Paper Abstract

In this paper, we will describe why the calibration process between CD-SEM and transmission electron microscopy (TEM) was performed. TEM is considered to be a unique solution such that we could obtain CD and sidewall angle accurately. TEM has the merit of having good resolution, but the measurement is performed over small segments of device features. The CD measurement error related to line edge roughness (LER) was also investigated in order to avoid the degradation in the accuracy of TEM measurement of CD. Many efforts were performed to reduce the uncertainty in TEM measurement of CD. The amount of the uncertainty related to TEM CD measurement was approximately 5 nm. We could obtain the linear relationship between CD-SEM and TEM measurements of CD Of logic gate lines ranging form 0.12 micrometers to 0.20 micrometers . The average CD measured using TEM was 15 nm lower than the CD measured with CD-SEM at poly silicon etched profile which had the sidewall angle of 86 degrees. Such difference is unacceptable in the CD measurement. The CD measurement error could be compensated with the modification of the measurement algorithms. The reproducibility of CD measurement for various algorithms was also investigated. It was shown that TEM measurement of CD could be applicable for the calibration with CD-SEM measurement to control various processes with different sidewall angles.

Paper Details

Date Published: 16 July 2002
PDF: 9 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473519
Show Author Affiliations
Chang-Young Jeong, Hynix Semiconductor Inc. (South Korea)
Joohyoung Lee, Hynix Semiconductor Inc. (South Korea)
Ki-Yeop Park, Hynix Semiconductor Inc. (South Korea)
Won Gyu Lee, Hynix Semiconductor Inc. (South Korea)
Dai-Hoon Lee, Hynix Semiconductor Inc. (South Korea)

Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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