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Proceedings Paper

Carbon nanotube scanning probe for surface profiling of DUV and 193-nm photoresist pattern
Author(s): Cattien V. Nguyen; Ramsey M.D. Stevens; Jabulani Barber; Jie Han; Meyya Meyyappan; Martha I. Sanchez; Carl E. Larson; William D. Hinsberg
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Paper Abstract

The continental scaling down of CMOS feature size to 100 nm and below necessitates a characterization technique to resolve high aspect ratio features in the nanoscale regime. This paper reports the use of atomic force microscopy coupled with high aspect ratio multi-walled carbon nanotube scanning probe tip for the purpose of imaging surface profile of photoresists. Multi-walled carbon-nanotube scanning probe tip for the purpose of imaging surface profile of photoresists. Multi-walled carbon-nanotube tips used in this work are 5-10 nm in diameter and about a micron long. Their exceptional mechanical strength and ability to reversibly buckle enable resolution of steep, deep nanometer-scale features. Images of photoresist patterns generated by 257 nm interference lithography as well as 193 nm lithography are presented to demonstrate multi-walled carbon nanotube scanning probe tip for applications in metrology.

Paper Details

Date Published: 16 July 2002
PDF: 5 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473506
Show Author Affiliations
Cattien V. Nguyen, NASA Ames Research Ctr. (United States)
Ramsey M.D. Stevens, NASA Ames Research Ctr. (United States)
Jabulani Barber, NASA Ames Research Ctr. (United States)
Jie Han, NASA Ames Research Ctr. (United States)
Meyya Meyyappan, NASA Ames Research Ctr. (United States)
Martha I. Sanchez, IBM Almaden Research Ctr. (United States)
Carl E. Larson, IBM Almaden Research Ctr. (United States)
William D. Hinsberg, IBM Almaden Research Ctr. (United States)


Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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