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Proceedings Paper

Low-voltage CD-SEM applications in MEMS devices
Author(s): Susan Redmond; Roger McKay; Mary Mellard; Catherine Norris; Jerry Wonnacott; Martin E. Mastovich
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Paper Abstract

The emergence of Micro Electro Mechanical Systems (MEMS) in production volumes has led to the need for stringent metrology. Quality control issues prompted examination of devices via analytical scanning electron microscopes (SEM); however, residues left on the resistor structures were not visible at high voltage. Thus the processes involved in the production of these devices has limited the usefulness of the traditional high voltage SEM in the measurement of critical dimensions. This paper presents the images acquired below 550 electron volts (eV) landing energy and the associated data on such inkjet devices. This capability has proven to be extremely useful both in terms of process control with metrology, and in terms of failure analysis.

Paper Details

Date Published: 16 July 2002
PDF: 12 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473501
Show Author Affiliations
Susan Redmond, Hewlett-Packard Co. (United States)
Roger McKay, Hewlett-Packard Co. (United States)
Mary Mellard, Hewlett-Packard Co. (United States)
Catherine Norris, Hewlett-Packard Co. (United States)
Jerry Wonnacott, Hewlett-Packard Co. (United States)
Martin E. Mastovich, Schlumberger Semiconductor Solutions (United States)


Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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