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Proceedings Paper

Structural characterizaton of deep-submicron lithographic structures using small-angle neutron scattering
Author(s): Eric K. Lin; Ronald L. Jones; Wen-li Wu; John G. Barker; Patrick J. Bolton; George G. Barclay
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Paper Abstract

As critical dimensions continue to decrease with each technology node, the precise characterization of line width and profile becomes an increasingly challenging task. Small angle neutron scattering (SANS) offers several advantages for the characterization of sub-100 nm structures, particularly as a calibrating measurement method. In this work, SANS is used to characterize three samples prepared with the same mask and focus conditions, but different photoresist formulations. The mask pattern consists of parallel lines with a nominal line width of 180 nm and a 1:2 line to space ratio. Scattering data are taken using both a focused neutron beam instrument (two-dimensional data) and a perfect crystal diffraction ultra-high resolution small angle neutron scattering (USANS) instrument. From the location and intensity of observed diffraction peaks, both the periodicity of each grating pattern and the average line widths are determined from simple analytic expressions with nanometer resolution.

Paper Details

Date Published: 16 July 2002
PDF: 8 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473493
Show Author Affiliations
Eric K. Lin, National Institute of Standards and Technology (United States)
Ronald L. Jones, National Institute of Standards and Technology (United States)
Wen-li Wu, National Institute of Standards and Technology (United States)
John G. Barker, National Institute of Standards and Technology (United States)
Patrick J. Bolton, Shipley Co. Inc. (United States)
George G. Barclay, Shipley Co. Inc. (United States)


Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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