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Proceedings Paper

Comparison of measured optical image profiles of silicon lines with two different theoretical models
Author(s): Richard M. Silver; Ravikiran Attota; M. Stocker; Jau-Shi Jay Jun; Egon Marx; Robert D. Larrabee; Beth Russo; Mark P. Davidson
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Paper Abstract

In this paper, we describe a new method for the separation of tool-induced measurement errors and sample-induced measurement errors. We apply the method to standard overlay target configurations. This method is used to separate the effects of the tool and sample errors in the measured optical intensity profiles and to obtain the best estimate of the correct intensity profile for a given sample geometry. This most accurate profile is then compared to calculated profiles from two different theoretical models. We explain the modeling in some detail when it has not been previously published.

Paper Details

Date Published: 16 July 2002
PDF: 21 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473479
Show Author Affiliations
Richard M. Silver, National Institute of Standards and Technology (United States)
Ravikiran Attota, National Institute of Standards and Technology (United States)
M. Stocker, National Institute of Standards and Technology (United States)
Jau-Shi Jay Jun, National Institute of Standards and Technology (United States)
Egon Marx, National Institute of Standards and Technology (United States)
Robert D. Larrabee, National Institute of Standards and Technology (United States)
Beth Russo, International SEMATECH and Motorola (United States)
Mark P. Davidson, Spectel Research Corp. (United States)


Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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