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Proceedings Paper

Amplitude and spatial frequency characterization of line-edge roughness using CD-SEM
Author(s): Guy Eytan; Ophir Dror; Laurent Ithier; Brigitte Florin; Zakir Lamouchi; Nadine Martin
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Paper Abstract

In this work we describe a simple and easy way to implement line edge roughness measurement using the Applied Materials VeraSEM 3D CD SEM. The outcomes of the measurement are the roughness amplitude and its main spatial wavelength components. In the first step we test this method on an e-beam resist wafer with known roughness and correlate the results with AFM measurements. In the second step, we measured the line roughness of a 193 nm resist FEM wafer. It was found that negative defocus is characterized by long wavelength components while positive defocus shows line roughness at all wavelengths.

Paper Details

Date Published: 16 July 2002
PDF: 9 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473473
Show Author Affiliations
Guy Eytan, Applied Materials (Israel)
Ophir Dror, Applied Materials (Israel)
Laurent Ithier, Applied Materials (France)
Brigitte Florin, CEA-LETI (France)
Zakir Lamouchi, CEA-LETI (France)
Nadine Martin, CEA-LETI (France)

Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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