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Proceedings Paper

Influence of coma effect on scanner overlay
Author(s): Jieh-Jang Chen; Chen-Ming Huang; Fan-Jia Shiu; Ching-Sen Kuo; S. C. Fu; C. T. Ho; Chung Wang; J. H. Tsai
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Paper Abstract

As the increasing demand of thinner CD for higher IC density and faster signal response, the techniques, such as OPC, PSM, and OAI was introduced to extend the optical resolution-limit below sub-100-nano. The lens quality is more important as critical dimension (CD) becomes smaller even using scanner instead of stepper. Pattern displacement error (PDE) resulting from lens aberration will be a phenomenon worthy to emphasize when technology design rules reaches sub-quarter micron generation and beyond1, 2. Because of inevitable coma aberration of lens, conventional 2úgm bar-in-bar overlay pattern cannot accurately represent real displacement of fine patterns in device. In this paper, evaluation of overlay pattern displacement with respect to lens coma aberration and its dependence on different feature size and structure are carried out. Different generation technology should combine with overlay pattern of proper feature size. Several illumination methodologies and NA/Sigma setting are also discussed in this paper.

Paper Details

Date Published: 16 July 2002
PDF: 6 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473467
Show Author Affiliations
Jieh-Jang Chen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chen-Ming Huang, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Fan-Jia Shiu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Ching-Sen Kuo, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
S. C. Fu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
C. T. Ho, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chung Wang, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
J. H. Tsai, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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