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Proceedings Paper

Quantitative profile-shape measurement study on a CD-SEM with application to etch-bias control
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Paper Abstract

One goal of CD metrology is to monitor lithographic process control and how it relates to post-etch results. At present, in-fab process control for this purpose is achieved through top-done CD measurements. To acquire profile information requires destructive cross-section SEM measurements or time- consuming atomic force microscope (AFM) measurements. To find height and profile information about a resist or etched structure directly on a CD-SEM, new techniques using the combination of in-column beam tilt and stereo graphic imaging have been developed and implemented on the Applied Materials VeraSEM-3D.

Paper Details

Date Published: 16 July 2002
PDF: 13 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473452
Show Author Affiliations
Benjamin D. Bunday, International SEMATECH (United States)
Michael Bishop, International SEMATECH (United States)
Marylyn Hoy Bennett, International SEMATECH (United States)
John R. Swyers, Applied Materials, Inc. (United States)
Zipora Haberman-Golan, Applied Materials, Inc. (Israel)

Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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