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Proceedings Paper

CD reference materials for sub-10th um applications
Author(s): Michael W. Cresswell; E. Hal Bogardus; J.V. Martinez de Pinillos; Marylyn Hoy Bennett; Richard A. Allen; William F. Guthrie; Christine E. Murabito; Barbara A. am Ende; Loren W. Linholm
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Paper Abstract

Prototype linewidth reference materials with Critical Dimensions (CDs) as narrow as 70 nm have been patterned in silicon-on-insulator films. The sidewalls of the reference features are parallel, normal to the substrate surface, and have almost atomically smooth surfaces. Linewidth calibration begins with the measurement of the electrical CDs of multiple reference features located at a selection of die sites on a wafer. The absolute widths of the cross sections of a sub-set of reference features on several chips that are diced from the wafer are then subjected to high resolution transmission electron microscopy (HRTEM) imaging to determine their physical CDs by lattice-plane counting. Sample preparation for lattice-plane counting by HRTEM Is destructive, and other reference features on the same chip become unusable for reference-material purposes. However, a calibration curve for converting the measured electrical CDs of reference features on other chips on the wafer, known as 'product reference features', to their physical values is obtained. The uncertainty attributed to the physical CD values of the product reference features generally varies inversely with the linear correlation between the cross- section lattice-plane counts and the corresponding electrical CD measurements of the sub-set of reference features that were selected for HRTEM imaging. A linear correlation value of approximately 0.97 has been obtained from a sub-set of 12 HRTEM measurements. In this case, the uncertainty attributed to the physical CD values of the product reference features is believed to be responsible for most of the product reference feature uncertainty. However, it has now been found that a forming-gas annealing treatment appears to prevent the referenced time dependence and thus has the potential for reducing the uncertainty level.

Paper Details

Date Published: 16 July 2002
PDF: 12 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473450
Show Author Affiliations
Michael W. Cresswell, National Institute of Standards and Technology (United States)
E. Hal Bogardus, International SEMATECH (United States)
J.V. Martinez de Pinillos, National Insitute of Standards and Technology (United States)
Marylyn Hoy Bennett, International SEMATECH (United States)
Richard A. Allen, National Institute of Standards and Technology (United States)
William F. Guthrie, National Institute of Standards and Technology (United States)
Christine E. Murabito, National Institute of Standards and Technology (United States)
Barbara A. am Ende, National Institute of Standards and Technology (United States)
Loren W. Linholm, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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