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Proceedings Paper

Dynamic in-situ temperature profile monitoring of a deep-UV post-exposure-bake process
Author(s): Barney M. Cohen; Wayne G. Renken; Paul Miller
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Paper Abstract

A system for monitoring the dynamic temperature profile during the deep UV (DUV) post exposure bake (PEB) is described. Platinum resistor temperature detectors (RTDs) are embedded into silicon wafers. Hardware and software convert the resistances to temperatures. The RTD calibration is National Institute of Standards and Technology (NIST) traceable. The wafers are tested on both a thermally uniform hot plate and a production PEB chamber. The temperature profiles for the PEB are fitted to a heat transfer model allowing heating and cooling time constants to be determined. High accuracy and precision are demonstrated.

Paper Details

Date Published: 16 July 2002
PDF: 10 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473441
Show Author Affiliations
Barney M. Cohen, SensArray Corp. (United States)
Wayne G. Renken, SensArray Corp. (United States)
Paul Miller, SensArray Corp. (United States)


Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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