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Proceedings Paper

Nanometer scale focused ion beam vacuum lithography using an ultrathin oxide resist
Author(s): Lloyd R. Harriott; Henryk Temkin; C. H. Chu; Yuh-Lin Wang; Y. F. Hsieh; Robert A. Hamm; Morton B. Panish; Harry H. Wade
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Paper Abstract

The vacuum lithography technique has been extended to the nanometer spatial resolution regime by incorporating a 100 keV focused ion beam system which has a beam diameter of 50 nm or less. A portable vacuum transfer chamber is used so that the sample is maintained on vacuum throughout processing without the processing chambers being directly connected. This process employs focused ion beam pattern writing on an ultrathin surface oxide layer which acts as a mask in a subsequent dry etching step. Molecular beam epitaxy is used to overgrow new epitaxial material on the patterned substrates. Examples of patterning and overgrowth applied to InP/InGaAs heterostructures are described.

Paper Details

Date Published: 1 August 1991
PDF: 7 pages
Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); doi: 10.1117/12.47343
Show Author Affiliations
Lloyd R. Harriott, AT&T Bell Labs. (United States)
Henryk Temkin, AT&T Bell Labs. (United States)
C. H. Chu, AT&T Bell Labs. (United States)
Yuh-Lin Wang, AT&T Bell Labs. (United States)
Y. F. Hsieh, AT&T Bell Labs. (United States)
Robert A. Hamm, AT&T Bell Labs. (United States)
Morton B. Panish, AT&T Bell Labs. (United States)
Harry H. Wade, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1465:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing
Martin C. Peckerar, Editor(s)

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