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Proceedings Paper

Proximity effect correction optimization considering fogging and loading effects compensation
Author(s): Seung-Hune Yang; Yo-Han Choi; Jong Rak Park; Yong-Hoon Kim; Seong-Woon Choi; Jung-Min Sohn
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Paper Abstract

Recently, the interest in enhancement of critical dimension (CD) accuracy has been significantly increased to satisfy requirements of sub 100nm devices. Proximity effect correction becomes an indispensable choice to improve CD accuracy within local area, and fogging and loading effects compensation has been tried to enhance global CD uniformity. However, proximity effect correction (PEC) parameters obtained without considering additional exposure such as fogging effect and the exposure to compensate it are not appropriate to fabricate real devices. In this paper, we investigated the relation of PEC parameters and various pattern densities and additional exposure experientially, analyzed theoretically using the edge image model to describe absorbed energy. Through evaluations, we could optimize proximity effect correction parameters for EBM-3500 taking additional exposure into account, and realize higher CD accuracy in mask fabrication.

Paper Details

Date Published: 16 July 2002
PDF: 8 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473426
Show Author Affiliations
Seung-Hune Yang, Samsung Electronics Co., Ltd. (South Korea)
Yo-Han Choi, Samsung Electronics Co., Ltd. (South Korea)
Jong Rak Park, Samsung Electronics Co., Ltd. (South Korea)
Yong-Hoon Kim, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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