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Proceedings Paper

Comparative investigation of CD-SEM carryover effect
Author(s): Anna K. Chernakova; Brad Miller; Thomas Roy Boonstra; Alan J. Fan
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Paper Abstract

Aggressive roadmaps impose stringent requirements not only on the metrology tools but on photoresist properties as well. In this article we investigate the interaction between electron beam in a CD SEM and different photoresists in an attempt to determine appropriate candidates from metrology point of view. We have evaluated sample damage (carryover) in order to find an approach leading to reduction of the sample degradation in the course of the measurement process and improve measurement precision. We have observed various linewidth changes under conditions expected in the case of single-tool repeatability, stability or multiple-tool matching procedures for CD SEM. The experimental data show that while all examined photoresists experienced certain changes some of them demonstrate less sensitivity. For modern CD SEM in addition to electron energy and current as factors defining the carryover, the possible effect of the clean room environment exposure should be considered as well. Recommendations have been made with respect to acceptable compromise based on the current precision requirements.

Paper Details

Date Published: 16 July 2002
PDF: 8 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473423
Show Author Affiliations
Anna K. Chernakova, Seagate Technology (United States)
Brad Miller, Seagate Technology (United States)
Thomas Roy Boonstra, Seagate Technology (United States)
Alan J. Fan, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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