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Proceedings Paper

Behavior of chemically amplified resist defects in TMAH solution
Author(s): Yuko Ono; Osamu Miyahara; Yukio Kiba; Junichi Kitano
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Paper Abstract

As semiconductor design rules become increasingly complex, there is growing demand for a reduction in defects in lithography processes, and the process that contributes most to such defects is believed to be the developing process. The control of defects occurring in chemically amplified resist due to changes in the resist structure has been growing in complexity. Today, when the exposure source is about to undergo a transition from KrF (248 nm) to ArF (193 nm), the controlled objects in defect inspection decrease in size, becoming smaller than the particle size that can be handled by inspection machines. For defect control against the background of the increasing miniaturization anticipated in the future, it will be necessary to gain an understanding of the behavior of ultra micro defects contained in developers. This report concerns the consideration of defect behavior in developing fluid resulting from the quantification of defects occurring due to resist dissolution in the developing fluid, and from defect behavioral analysis performed on the developing fluid.

Paper Details

Date Published: 16 July 2002
PDF: 8 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473419
Show Author Affiliations
Yuko Ono, Tokyo Electron Ltd. (Japan)
Osamu Miyahara, Tokyo Electron Kyushu Ltd. (Japan)
Yukio Kiba, Tokyo Electron Kyushu Ltd. (Japan)
Junichi Kitano, Tokyo Electron Ltd. (Japan)


Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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