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Proceedings Paper

Tip characterization for CD-AFM: getting to 2 nm, 3 sigma
Author(s): Kirk Miller; Ami Chand; Greg Dahlen; Bradley Todd
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Paper Abstract

We present nanometer-scale physical structures and analysis algorithms for characterizing tip width and shape for critical dimension atomic force microscopy (CD-AFM). Automated CD-AFM measurements will be used in future generation, and a robust methodology is demonstrated for ensuring long-term repeatability of width measurements on sub-100 nm structures. Structures are designed and chosen for their width uniformity on the sub-nm scale, as well as for their well defined shapes that can be deconvolved from the scan data to yield a precise image of the tip. We apply our tip characterization techniques to measurements of photoresist linewidth, contact etch and poly Si gate width in a manufacturing environment, and show that tool performance and characterization strategy can combine to give excellent long-term repeatability.

Paper Details

Date Published: 16 July 2002
PDF: 6 pages
Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); doi: 10.1117/12.473412
Show Author Affiliations
Kirk Miller, Veeco Metrology Group (United States)
Ami Chand, Veeco Metrology Group (United States)
Greg Dahlen, Veeco Metrology Group (United States)
Bradley Todd, Veeco Metrology Group (United States)

Published in SPIE Proceedings Vol. 4689:
Metrology, Inspection, and Process Control for Microlithography XVI
Daniel J. C. Herr, Editor(s)

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