Share Email Print

Proceedings Paper

Recent developments of x-ray lithography in Canada
Author(s): Mohamed Chaker; Stephane Boily; A. Ginovker; Alain Jean; Jean-Claude Kieffer; P. P. Mercier; Henri Pepin; Pak Leung; John F. Currie; Hugues Lafontaine
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

An overview of current activities in Canada is reported, including x-ray lithography studies based on laser plasma sources and x-ray mask development. In particular, the application of laser plasma sources for x-ray lithography is discussed, taking into account the industrial requirement and the present state of laser technology. The authors describe the development of silicon carbide membranes for x-ray lithography application. SiC films were prepared using either a 100 kHz plasma-enhanced chemical vapor deposition (PECVD) system or a laser ablation technique. These membranes have a relatively large diameter (> 1 in.) and a high optical transparency (> 50%). Experimental studies on stresses in tungsten films deposited with triode sputtering are reported.

Paper Details

Date Published: 1 August 1991
PDF: 10 pages
Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); doi: 10.1117/12.47340
Show Author Affiliations
Mohamed Chaker, INRS-Energie (Canada)
Stephane Boily, INRS-Energie (Canada)
A. Ginovker, INRS-Energie (Canada)
Alain Jean, INRS-Energie (Canada)
Jean-Claude Kieffer, INRS-Energie (Canada)
P. P. Mercier, INRS-Energie (Canada)
Henri Pepin, INRS-Energie (Canada)
Pak Leung, Northern Telecom Electronics (Canada)
John F. Currie, Ecole Polytechnique de Montreal (Canada)
Hugues Lafontaine, Ecole Polytechnique de Montreal (Canada)

Published in SPIE Proceedings Vol. 1465:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing
Martin C. Peckerar, Editor(s)

© SPIE. Terms of Use
Back to Top