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Proceedings Paper

Recent developments of x-ray lithography in Canada
Author(s): Mohamed Chaker; Stephane Boily; A. Ginovker; Alain Jean; Jean-Claude Kieffer; P. P. Mercier; Henri Pepin; Pak Leung; John F. Currie; Hugues Lafontaine
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Paper Abstract

An overview of current activities in Canada is reported, including x-ray lithography studies based on laser plasma sources and x-ray mask development. In particular, the application of laser plasma sources for x-ray lithography is discussed, taking into account the industrial requirement and the present state of laser technology. The authors describe the development of silicon carbide membranes for x-ray lithography application. SiC films were prepared using either a 100 kHz plasma-enhanced chemical vapor deposition (PECVD) system or a laser ablation technique. These membranes have a relatively large diameter (> 1 in.) and a high optical transparency (> 50%). Experimental studies on stresses in tungsten films deposited with triode sputtering are reported.

Paper Details

Date Published: 1 August 1991
PDF: 10 pages
Proc. SPIE 1465, Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing, (1 August 1991); doi: 10.1117/12.47340
Show Author Affiliations
Mohamed Chaker, INRS-Energie (Canada)
Stephane Boily, INRS-Energie (Canada)
A. Ginovker, INRS-Energie (Canada)
Alain Jean, INRS-Energie (Canada)
Jean-Claude Kieffer, INRS-Energie (Canada)
P. P. Mercier, INRS-Energie (Canada)
Henri Pepin, INRS-Energie (Canada)
Pak Leung, Northern Telecom Electronics (Canada)
John F. Currie, Ecole Polytechnique de Montreal (Canada)
Hugues Lafontaine, Ecole Polytechnique de Montreal (Canada)

Published in SPIE Proceedings Vol. 1465:
Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing
Martin C. Peckerar, Editor(s)

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