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Proceedings Paper

Bandstop magnetostatic wave resonators on micromachined silicon membrane
Author(s): Romolo Marcelli; George Sajin; Florea Craciunoiu; Alina Cismaru
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Paper Abstract

Two band-stop SERs (resonator A and resonator B) on silicon membrane were obtained and characterized. The frequency tunability domain of these resonators was between 3 GHz and 9.5 GHz ca. obtained by changing the dc magnetic bias field between Happl = 0.02 T and Happl = 0.34 T. The measurements of the S21 parameter demonstrate a suppression of more than 20 dB of the high order modes, showing a good selectivity of this kind of resonator. The rejection ratio was better than -20 dB in the frequency domain from f = 3 GHz to f = 9.5 GHz for the resonator A and better than -20 dB between f = 4.2 GHz and f = 9.5 GHz for the resonator B. These results demonstrate the possibility to obtain microwave band-stop resonators supported on silicon membrane with high isolation and rejection ratios.

Paper Details

Date Published: 16 January 2003
PDF: 8 pages
Proc. SPIE 4981, MEMS Components and Applications for Industry, Automobiles, Aerospace, and Communication II, (16 January 2003); doi: 10.1117/12.473375
Show Author Affiliations
Romolo Marcelli, CNR-IMM (Italy)
George Sajin, National Research and Development Institute for Microtechnologies (Romania)
Florea Craciunoiu, National Research and Development Institute for Microtechnologies (Romania)
Alina Cismaru, National Research and Development Institute for Microtechnologies (Romania)


Published in SPIE Proceedings Vol. 4981:
MEMS Components and Applications for Industry, Automobiles, Aerospace, and Communication II
Siegfried W. Janson, Editor(s)

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