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Proceedings Paper

Defects in SIPOS film studied by ESR
Author(s): Yun Zhen Wang; Yao Ling Pan
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Paper Abstract

In the present paper, we used the data of g-factor value, linewidth Hpp, and spin density Ns from ESR measurement to investigate the defects in SIPOS film. There are four defects related to the different Si tetrahedral structures Si - (Si4 - YOY) in SIPOS film. These defects are named defect 1, defect 2, defect 3, and defect 4. The ESR spectrum found for a specific oxygen content is assumed to be a linear superposition of the resonance of these four defects. The g-value is the statistical average of four g-values' corresponding defects. Using the above model of defects, the variations of linewidth and spin densities of SIPOS film with different oxygen content and annealing conditions can be well described.

Paper Details

Date Published: 1 November 1991
PDF: 4 pages
Proc. SPIE 1519, International Conference on Thin Film Physics and Applications, (1 November 1991); doi: 10.1117/12.47336
Show Author Affiliations
Yun Zhen Wang, East China Normal Univ. (China)
Yao Ling Pan, East China Normal Univ. (China)


Published in SPIE Proceedings Vol. 1519:
International Conference on Thin Film Physics and Applications

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